FM - 3rd International Conference
Emerging Materials, Technologies and Applications for Non-volatile Memory Devices

Hideo OHNO, Tohoku University, Japan
Martin SALINGA, RWTH, Aachen, Germany
Jianhua (Joshua) YANG, University of Massachusetts, USA
Sabina SPIGA, CNR-IMM, Agrate Brianza, Italy  (Convener)
Marin ALEXE, The University of Warwick, UK
Marco BERNASCONI, University of Milano-Bicocca, Italy
Gennadi BERSUKER, The Aerospace Corporation, USA
An CHEN, IBM Corporation, USA
I-Wei CHEN, University of Pennsylvania, USA
Wen-Chang CHEN, National Taiwan University, Taiwan
Albert CHIN, National Chiao Tung University, Taiwan
Ludovic GOUX, Imec, Belgium
Alexei GRUVERMAN, University of Nebraska-Lincoln, USA
Tuo-Hung HOU, National Chiao Tung University, Taiwan
Daniele IELMINI, Politecnico di Milano, Italy
Anquan JIANG, Fudan University, China
Jinfeng KANG, Peking University, China
Antony KENYON, University College London, UK
Alexander V. KOLOBOV, AIST, Japan
Michael KOZICKI, Arizona State University, USA
Shahar KVATINSKY, Technion, Israel
Luca LARCHER, University of Modena and Reggio Emilia, Italy
Chrong Jung LIN, National Tsing Hua University, Taiwan
Ming LIU, Institute of Microelectronics, CAS, China
Massimo LONGO, CNR-IMM, Italy
Blanka MAGYARI-KÖPE, Stanford University, USA
Thomas MIKOLAJICK, Nam-Lab, Germany
Dafinè RAVELOSONA, Université Paris Sud, France
Ilan RIESS, Technion, Israel
Yakov ROIZIN, Tower Jazz, Israel
Jennifer RUPP, MIT, USA
Abu SEBASTIAN, IBM Research, Switzerland
Veronique SOUSA, CEA-LETI, France
Dmitri STRUKOV, University of California, Santa Barbara, USA
Ilia VALOV, Research Centre Juelich, Germany
Andrei ZENKEVICH, Moscow Institute of Physics and Technology, Russia
Hugh BARNABY, Arizona State University, USA
Helene BEA, Spintec and CEA, France
Marco BERNASCONI, University of Milano-Bicocca, Italy
Stefano BRIVIO, CNR-IMM, Agrate Brianza, Italy
Shunsuke FUKAMI ,Tohoku University, Japan
Pietro GAMBARDELLA, ETH Zurich, Switzerland
Cheol Seong HWANG, Seoul National University, South Korea
Salvatore IANNOTTA, CNR-IMEM, Parma, Italy
Jinfeng KANG, Peking University, China
Alexander V. KOLOBOV, AIST, Japan
Michael KOZICKI, Arizona State University, USA
Yusuf LEBLEBICI, EPFL, Switzerland
Thomas MIKOLAJICK, Nam-Lab, Germany
Gabriele NAVARRO / Anthonin VERDY, CEA-LETI, France
Francesco Maria PUGLISI, University of Modena and Reggio Emilia, Italy
Damien QUERLIOZ, University Paris Sud, France
Bipin RAJENDRAN, New Jersey Institute of Technology, USA
Jennifer L.M. RUPP, MIT, USA
Martin SALINGA, RWTH Aachen University, Germany
Abu SEBASTIAN, IBM Research Zurich, Switzerland
Ilia VALOV, Research Centre Juelich, Germany
Qiangfei XIA, University of Massachusetts, Amherst, USA
Non-volatile memory devices are currently key elements of several electronic and portable systems (digital cameras, solid state disks, smartphones, computers, e-books, tablets,..) and their market and potential applications are expected to continuously increase in the next years. Several advanced non-volatile memory concepts (RRAM, PCM, MRAM, STT-MRAM, FRAM, memristive devices,....), exploiting innovative materials and storage mechanisms, are under investigation to achieve better performance, higher scalability, and to address novel applications for more efficient, intelligent and secure computing systems. Besides pursuing the downscaling of non-volatile memories in terms of minimum size and integration density, the new paradigm is also directed to devices that can integrate multiple functionalities, such as computing and storing information at the same time. This approach will enable the fabrication of novel nanoelectronics circuits with potential applications in several fields, including computation schemes emulating the brain functionality, flexible electronics and non-volatile logics.
This symposium will address recent advances on non-volatile memory devices, with focus on innovative storage concepts, new materials and devices, integration schemes and selectors for the storage elements, understanding and modelling of the physical mechanisms for data storage down to the nanoscale, memristive devices and novel applications for von Neumann Computing and beyond.
Session Topics

FM-1 Magnetic, ferroelectric and multiferroic materials for memory devices

  • MRAM and spin transfer torque (STT) MRAM memories
  • Racetrack memory and emerging three terminal magnetic device materials
  • FeRAM and Ferroelectric FET
  • Memory based on ferroelectric tunnel junctions
  • Novel materials including organic ferroelectric and magnetic nanostructures for memories

FM-2 Resistance switching (RRAM) and Phase Change (PCM) Memories

  • Advances in materials and technologies for resistive memories (RRAM and PCM)
  • Advanced characterization techniques, theory and modelling of resistive memories
  • New materials and concepts for PCM, including low-dimensional cells, layered and super-lattice phase change materials
  • RRAM based on graphene and 2D materials
  • Polymer-based and hybrid organic & inorganic memory devices
  • 3D architectures, cross-bar arrays and advanced selectors

FM-3 Emerging applications for non-volatile memories

  • Memristive devices and novel memristive-based circuits
  • Materials and devices for neuromorphic-engineering and brain-inspired computing
  • Non-volatile logics based on resistive memories and hybrid CMOS/non-volatile memory circuits
  • Flexible electronics, radiation-hard memories, space applications


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