Symposium FJ
Development and Application of New Functional Transparent Conducting and Semiconducting Inorganic Materials

Thomas ANTHOPOULOS, KAUST, Saudi Arabia
Clark BRIGHT, Bright Thin Film Solutions LLC, USA
Klaus ELLMER, Helmholtz Centre Berlin for Materials and Energy, Germany
Norifumi FUJIMURA, Osaka Prefecture University, Japan
Alexander GASKOV, Moscow State University, Russia
Hao GONG, National University Singapore, Singapore
Claes G. GRANQVIST, Uppsala University, Sweden
Andreas KLEIN, Darmstadt University of Technology, Germany
Sang Yeol LEE, Cheongju University, Korea
Tobin J. MARKS, Northwestern University, USA
Julia E. MEDVEDEVA, Missouri University of Science & Technology, USA
Joan Ramon MORANTE, Catalonia Inst. for Energy Research, Spain
Martyn E. PEMBLE, Tyndall National Institute, Ireland
David O. SCANLON, University College London, Ireland
Yuzo SHIGESATO, Aoyama Gakuin University, Japan
Bernd SZYSZKA, Technical University of Berlin, Germany
Chris G. VAN DE WALLE, University of California, Santa Barbara, USA
Tim VEAL, University of Liverpool, UK
John F. WAGER, Oregon State University, USA
Yiquan WU, Alfred University, USA
Qun ZHANG, Fudan University, China
Daniel BELLET, Grenoble INP, France
Roberto FORNARI, University of Parma, Italy
Junjun JIA, Aoyama Gakuin University, Japan
Kee Hoon KIM, Seoul National University, South Korea
Andreas KLEIN, Darmstadt University of Technology, Germany
Demosthenes KOUTSOGEORGIS, Nottingham Trent University, UK
Seth MARDER, Georgia Institute of Technology, USA
Markus MAUTE, Osram Opto Semiconductors, Germany
Daniel NEUMAIER, AMO GmbH, Germany
Nobuto OKA, Kindai University, Japan
Ian POVEY, Tyndall National Institute, Ireland
Pavle V. RADOVANOVIC, University of Waterloo, Canada
Thomas RIEDL, University of Wuppertal, Germany
Yaroslav ROMANYUK, EMPA, Switzerland
Marina RUMYANTSEVA, Moscow State University, Russia
Andre SCHLEIFE, University of Illinois at Urbana-Champaign, USA
Giancarlo TRIMARCHI, Northwestern University, USA
Leonidas TSETSERIS, National Technical University of Athens, Greece
Chris G. VAN DE WALLE, University of California, Santa Barbara / Anderson JANOTTI, University of Delaware, USA
John F. WAGER, Oregon State University, USA
Man-Hoi WONG, Nat.Inst.of Information and Communications Tech., Japan
Naoomi YAMADA, Chubu University, Japan
Tetsuya YAMAMOTO, Kochi University of Technology, Japan
Oxide based electronics are seeing an increasing set of applications based on new materials and the ability to tailor structure and functionality to enable new functionality.  This includes improved TCs new semiconductors for high speed and wide bandgap electronics, new piezoelectric materials and photovoltaic absorbers. Achieving this requires an increasingly broad materials set but also structural diversity from amorphous to expitaxial and the inclusion of new hybrid materials.  Increasingly diverse structures with complex composition including amorphous and crystalline metal oxide materials as well as wide band-gap nonoxide materials including e.g. nanowire networks and quantum dot structures are extending device designer’s palette of transparent conductors and semiconductors by addressing a variety of cutting edge applications in flexible electronics, new active optoelectronics, even spin photonics. New advanced in materials and processing are also extending the range of the more experienced use of transparent conducting oxides in large area flat-panel displays, thin-film solar cells, antistatic coatings, functional and smart glasses and a number of other applications.
Underlying the development of new functional materials for example organic and nanotube based TCs is the need for a clearer and predictive understanding of basic materials science such as the electronic structure, carrier and trap origin, mobility and scattering, and doping mechanisms which govern conductivity and transparency, coupled with a better insight into interfacial and chemical compatibility issues and the development of models of the performance limits of materials and devices.
Objective of the International Symposium “Development and Application of New Functional Transparent Conducting and Semiconducting Oxides”, which follows the discussions on related subjects held at previous CIMTEC Conferences, is to gather specialists from academia and industry to highlight updated developments in the area from fundamental science to materials synthesis, processing techniques device development and advanced/novel/prospective applications.
Session Topics

FJ-1 Fundamentals

  • Basic Theory of functional electronic oxides
  • Materials Genomics of functional oxides including
    • Electronic structure
    • Doping mechanisms
    • Carriers origin and dynamics
    • Optimizing band structure
    • Surfaces and interfaces in hybrid structures
  • Amorphous vs crystalline materials basic physics and application considerations
  • Characterizations of basic TC properties including inoperando

FJ-2 Material design and device development

  • Advanced crystalline materials
  • ZnO based materials
  • p-type transparent conductors
  • Indium-free TCOs
  • Amorphous metal-oxide materials
  • Non-oxide transparent conductors
  • Nanowire/nanotube arrays and Q-dot based transparent structures
  • Other novel materials/concepts
  • Device characterisation and properties
  • Growth Approaches
    • PVD/CVD
    • Atomic layer deposition
    • Spin coating, spray pyrolysis and other chemical techniques
    • Direct writing/printing/patterning
  • Novel tools and equipment for device fabrication
  • Interfaces and chemical compatibility issues
  • Modeling and simulation of materials and devices

FJ-3 Applications

  • Flexible electronics (e.g. roll-up displays, electronic paper)
  • Transparent devices (TTFTs) and applications including TC active layers
  • Photovoltaics
  • Piezoelectrics
  • Wide Bandgap Power Electronics
  • Advances in smart /functional applications e.g. photocatalytic/active/protective coatings,
  • smart windows, etc.
  • Other advanced/novel/emerging applications
  • Building applications
  • Multifunctional materials including porous materials


Cimtec 2018

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